(5/5) based on 20 customer reviews
Description
Sep 25, 2000 2SD517. American Microsemiconductor. BU508A . BU508A . Philips Semiconductor. MJC10021WP. PTC10021. American Microsemiconductor. UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO. LTD. 1. QW-R214-001,A. SILICON DIFFUSED POWER. BU508 -1. General Information. Extended Product Type: BU508 -1. Product ID: 7TAA117140R0011. EAN: 0785991019094. Catalog Description: 3 BUSHING Mar 10, 2014 These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series. BU508 **. 8.0. 125. 1,000. 700. 5.0. 4.5. 2,000. - -. 7.0 . BU508A **. 8.0. 125. 1,500. 700. 1.0. 4.5. 2,000. - -. 7.0 . BU508D**. 8.0. 125. 1,500. 700. 1.0. 4.5. 2,000.
| Part Number | BU508A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Panasonic |
| Description | TRANS NPN 700V 8A TO-247 |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 700V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 2A, 4.5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | 125W |
| Frequency - Transition | 7MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Image |  |
BU508A
PANSONI
27172
1.66
Shenzhen Lichengda Technology Co.,LIMITED
BU508A
PANASO
10000
2.615
Belt (HK) Electronics Co
BU508A
PANASONI
9
3.57
Semitech Inc
BU508A
PANASON
100
4.525
Antony Electronic Ltd.
BU508A
Panosonic
128
5.48
FLOWER GROUP(HK)CO.,LTD
