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Part Number | DRA2123Y0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 200MW MINI3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G3-B |
Image | ![]() |
DRA2123Y0L
PANSONI
15000
1.65
MY Group (Asia) Limited
DRA2123Y0L
PANASO
3000
2.6875
HK HEQING ELECTRONICS LIMITED
DRA2123Y0L
PANASONI
4000
3.725
CIS Ltd (CHECK IC SOLUTION LIMITED)
DRA2123Y0L
PANASON
2849
4.7625
Dan-Mar Components Inc.
DRA2123Y0L
Panosonic
8000
5.8
Yingxinyuan INT'L (Group) Limited