Part Number | IRFB3206PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Panasonic |
Description | MOSFET N-CH 60V 120A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6540pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
IRFB3206PBF
PANSONI
5913
1.18
HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED
IRFB3206PBF
PANASO
3265
1.8775
Superior Electronics Limited
IRFB3206PBF
PANASONI
2480
2.575
Top Era Technology Industrial Co., Limited
IRFB3206PBF
PANASON
3176
3.2725
HEXING TECHNOLOGY (HK) LIMITED
IRFB3206PBF
Panosonic
496
3.97
ANCHIP TECHNOLOGY CO., LIMITED