Part Number | MTW32N20E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Panasonic |
Description | MOSFET N-CH 200V 32A TO-247 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 180W (Tc) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
MTW32N20E
PANSONI
16000
0.98
CIS Ltd (CHECK IC SOLUTION LIMITED)
MTW32N20E
PANASO
866
1.73
FLOWER GROUP(HK)CO.,LTD
MTW32N20E
PANASONI
50000
2.48
Yingxinyuan INT'L (Group) Limited
MTW32N20E
PANASON
186176
3.23
Cicotex Electronics (HK) Limited
MTW32N20E
Panosonic
5876
3.98
Analog Technology Limited