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Description
Datasheet Jun 2, 2008 SDT04S60 . thinQ! SiC Schottky Diode. Silicon Carbide Schottky Diode. Worlds first 600V Schottky diode. Revolutionary semiconductor. Oct 30, 2007 SDT04S60 . Diode. 1. D2. 1N5408. Diode. 1. D3. 1N4007. Diode. 1. F1. 5A. Fuse. 1. Fuse Holder. 2. IC1. ICE2PCS03. 1. JP1. 12.5mm, 0.7mm. CY1. 2.2nF, Y2, 250V. Ceramic Cap. Epcos / B81123C1222M000. CY2. 2.2nF, Y2, 250V. Ceramic Cap. Epcos / B81123C1222M000. Connector. D1. SDT04S60 . CX2. 0.47uF, X1, 275V. Ceramic Cap. 1. CY1. 2.2nF, Y2, 250V. Ceramic Cap. 1. CY2. 2.2nF, Y2, 250V. Ceramic Cap. 1. Connector. 3. D1. SDT04S60 . Diode. 1. Jun 17, 2005 SDT04S60 . Diode. 1. D2. 1N5408. Diode. 1. D3. 1N4007. Diode. 1. F1. 5A. Fuse. 1. Fuse Holder. 2. IC1. ICE1PCS02. 1. JP1. 12.5mm, 0.7mm.
| Part Number | SDT04S60 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Single |
| Brand | Panasonic |
| Description | DIODE SCHOTTKY 600V 4A TO220-2 |
| Series | thinQ! |
| Packaging | Silicon Carbide Schottky |
| Diode Type | Tube |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 4A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 4A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 200µA @ 600V |
| Capacitance @ Vr, F | 150pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | PG-TO220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Image |  |
SDT04S60
PANSONI
6000
1.15
HK HEQING ELECTRONICS LIMITED
SDT04S60
PANASO
6978
2.2225
ONSTAR ELECTRONICS CO., LIMITED
SDT04S60
PANASONI
7867
3.295
Ande Electronics Co., Limited
SDT04S60
PANASON
11932
4.3675
Viassion Technology Co., Limited
SDT04S60
Panosonic
10807
5.44
CIS Ltd (CHECK IC SOLUTION LIMITED)
