(5/5) based on 3 customer reviews
Description
GaAlAs Double Hetero. DESCRIPTION. TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and. 1IF=100 mA , 2IF=1 A, 3IF=250 mA. PART NUMBER. Angle of Half. Intensity. ( ). Intensity (mW/sr). Degradation. ( % ). 0 hours. 4000 hours. Vishay TSHG5210 . TSHG5210 . 850. 10. 230. 20. Stand-off. TSHG5410. 850. 18. 90. 20. Stand-off. TSHG5510. 830. 38. 32. 15. Stand-off. TSHG6200. 850. 10. 180. 20. No stand-off. TSHF5210. 3.7. 880 nm/360 mW/sr. TSHF5410. 2.1. 880 nm/135 mW/sr. TSHF6210. 2.1. 880 nm/360 mW/sr. TSHF6410. 2.1. 880 nm/135 mW/sr. TSHG5210 . 3.7. 180. 30. . tShF6410. 890. 22. 70. 30. . tShG5210 . 850. 10. 230. 20. . tShG5410. 850. 18. 90. 20. . tShG5510. 830.
| Part Number | TSHG5210 |
| Main Category | Optoelectronics |
| Sub Category | Infrared, UV, Visible Emitters |
| Brand | Panasonic |
| Description | EMITTER IR 850NM 100MA RADIAL |
| Series | - |
| Packaging | Bulk |
| Type | Infrared (IR) |
| Current - DC Forward (If) (Max) | 100mA |
| Radiant Intensity (Ie) Min @ If | 140mW/sr @ 100mA |
| Wavelength | 850nm |
| Voltage - Forward (Vf) (Typ) | 1.5V |
| Viewing Angle | 20° |
| Orientation | Top View |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | Radial |
| Image |  |
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