Part Number | UNR511200L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SMini3-G1 |
Image |
UNR511200L
PANSONI
3000
1.4
KDH SEMICONDUCTOR CO., LIMITED
UNR511200L
PANASO
89900
1.87
AIC Semiconductor Co., Limited
UNR511200L
PANASONI
361600
2.34
IC Chip Co., Ltd.
UNR511200L
PANASON
3000
2.81
Gallop Great Holdings (Hong Kong) Limited
UNR511200L
Panosonic
14000
3.28
CIS Ltd (CHECK IC SOLUTION LIMITED)