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Part Number | UNR511VG0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1.5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image | ![]() |
UNR511VG0L
PANSONI
8000
1.41
MY Group (Asia) Limited
UNR511VG0L
PANASO
9000
2.665
Winsun Components Co., Ltd
UNR511VG0L
PANASONI
11896
3.92
Viassion Technology Co., Limited
UNR511VG0L
PANASON
20000
5.175
CIS Ltd (CHECK IC SOLUTION LIMITED)
UNR511VG0L
Panosonic
9000
6.43
DES TECHNOLOGY (HK) LIMITED