Part Number | UNR5211G0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS NPN 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image |
UNR5211G0L
PANSONI
2971
0.85
MY Group (Asia) Limited
UNR5211G0L
PANASO
6986
1.255
HK HEQING ELECTRONICS LIMITED
UNR5211G0L
PANASONI
6634
1.66
TERNARY UNION CO., LIMITED
UNR5211G0L
PANASON
4173
2.065
Ande Electronics Co., Limited
UNR5211G0L
Panosonic
6631
2.47
HK TWO L ELECTRONIC LIMITED