Part Number | UNR521200L(UN5212-TX) |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS NPN 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SMini3-G1 |
Image |
UNR521200L
PANSONI
2848
0.82
Bonase Electronics (HK) Co., Limited
UNR521200L
PANASO
9831
1.97
Gallop Great Holdings (Hong Kong) Limited
UNR521200L(UN5212-TX)
PANASONI
574
3.12
CIS Ltd (CHECK IC SOLUTION LIMITED)
UNR521200L
PANASON
5027
4.27
Viassion Technology Co., Limited
UNR521200L
Panosonic
6546
5.42
N&S Electronic Co., Limited