Part Number | UNR52A1G0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS NPN 150MW SMINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image |
UNR52A1G0L
PANSONI
3000
1.39
KDH SEMICONDUCTOR CO., LIMITED
UNR52A1G0L
PANASO
6000
2.475
HongKong Wei Ya Hua Electronic Technology Co.,Limited
UNR52A1G0L
PANASONI
46250
3.56
Gallop Great Holdings (Hong Kong) Limited
UNR52A1G0L
PANASON
8000
4.645
MY Group (Asia) Limited
UNR52A1G0L
Panosonic
2960
5.73
H.X.Y ELECTRONIC HK LIMITED