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Part Number | UNR52AFG0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS NPN 150MW SMINI3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image | ![]() |
UNR52AFG0L
PANSONI
6930
1.71
Yingxinyuan INT'L (Group) Limited
UNR52AFG0L
PANASO
7329
2.32
MY Group (Asia) Limited
UNR52AFG0L
PANASONI
8542
2.93
KDH SEMICONDUCTOR CO., LIMITED
UNR52AFG0L
PANASON
9433
3.54
CIS Ltd (CHECK IC SOLUTION LIMITED)
UNR52AFG0L
Panosonic
7407
4.15
HK HEQING ELECTRONICS LIMITED