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Part Number | UNR52AFG0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS NPN 150MW SMINI3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image | ![]() |
UNR52AFG0L
PANSONI
24000
0.05
Yingxinyuan INT'L (Group) Limited
UNR52AFG0L
PANASO
15000
1.4125
MY Group (Asia) Limited
UNR52AFG0L
PANASONI
54000
2.775
KDH SEMICONDUCTOR CO., LIMITED
UNR52AFG0L
PANASON
55000
4.1375
CIS Ltd (CHECK IC SOLUTION LIMITED)
UNR52AFG0L
Panosonic
54000
5.5
HK HEQING ELECTRONICS LIMITED