Part Number | DRA2123Y0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 200MW MINI3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G3-B |
Image |
DRA2123Y0L
PANSONI
8734
0.21
MY Group (Asia) Limited
DRA2123Y0L
PANASO
9499
1.3775
HK HEQING ELECTRONICS LIMITED
DRA2123Y0L
PANASONI
8993
2.545
CIS Ltd (CHECK IC SOLUTION LIMITED)
DRA2123Y0L
PANASON
6997
3.7125
Dan-Mar Components Inc.
DRA2123Y0L
Panosonic
8062
4.88
Yingxinyuan INT'L (Group) Limited