Part Number | MTW32N20E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Panasonic |
Description | MOSFET N-CH 200V 32A TO-247 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 180W (Tc) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
MTW32N20E
PANSONI
6810
0.91
CIS Ltd (CHECK IC SOLUTION LIMITED)
MTW32N20E
PANASO
729
1.975
FLOWER GROUP(HK)CO.,LTD
MTW32N20E
PANASONI
9624
3.04
Yingxinyuan INT'L (Group) Limited
MTW32N20E
PANASON
2937
4.105
Cicotex Electronics (HK) Limited
MTW32N20E
Panosonic
6936
5.17
Analog Technology Limited