Part Number | UNR211100L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 200MW MINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G1 |
Image |
UNR211100L
PANSONI
8697
0.6
Gallop Great Holdings (Hong Kong) Limited
UNR211100L
PANASO
8837
1.245
Winsun Components Co., Ltd
UNR211100L
PANASONI
3400
1.89
Pacific Corporation
UNR211100L
PANASON
6913
2.535
MY Group (Asia) Limited
UNR211100L
Panosonic
9395
3.18
N&S Electronic Co., Limited