Part Number | UNR211600L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 200MW MINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G1 |
Image |
UNR211600L
PANSONI
7090
0.68
Bonase Electronics (HK) Co., Limited
UNR211600L
PANASO
7159
1.1925
Gallop Great Holdings (Hong Kong) Limited
UNR211600L
PANASONI
8124
1.705
Yingxinyuan INT'L (Group) Limited
UNR211600L
PANASON
3570
2.2175
Viassion Technology Co., Limited
UNR211600L
Panosonic
6740
2.73
Huajiaxin Electronic Technology (Hong Kong) Co., Limited