Part Number | UNR5111G0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image |
UNR5111G0L
PANSONI
8000
1.89
MY Group (Asia) Limited
UNR5111G0L
PANASO
2820
2.6325
Pacific Corporation
UNR5111G0L
PANASONI
1785
3.375
Rainstar Components USA Incorporated Limited
UNR5111G0L
PANASON
2000
4.1175
L C Great Exploit Limited
UNR5111G0L
Panosonic
12785
4.86
CIS Ltd (CHECK IC SOLUTION LIMITED)