Part Number | UNR511200L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SMini3-G1 |
Image |
UNR511200L
PANSONI
1105
0.23
KDH SEMICONDUCTOR CO., LIMITED
UNR511200L
PANASO
9954
1.245
AIC Semiconductor Co., Limited
UNR511200L
PANASONI
5617
2.26
IC Chip Co., Ltd.
UNR511200L
PANASON
3356
3.275
Gallop Great Holdings (Hong Kong) Limited
UNR511200L
Panosonic
885
4.29
CIS Ltd (CHECK IC SOLUTION LIMITED)