Part Number | UNR5117G0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image |
UNR5117G0L
PANSONI
8000
1.5
MY Group (Asia) Limited
UNR5117G0L
PANASO
12000
2.8225
Winsun Components Co., Ltd
UNR5117G0L
PANASONI
8914
4.145
Viassion Technology Co., Limited
UNR5117G0L
PANASON
12000
5.4675
DES TECHNOLOGY (HK) LIMITED
UNR5111G0L
Panosonic
2820
6.79
Pacific Corporation