Part Number | UNR51A6G0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 80MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image |
UNR51A6G0L
PANSONI
371
0.58
MY Group (Asia) Limited
UNR51A6G0L
PANASO
2875
1.31
Acon Electronics Limited
UNR51A6G0L
PANASONI
5197
2.04
HK HEQING ELECTRONICS LIMITED
UNR51A6G0L
PANASON
284
2.77
CIS Ltd (CHECK IC SOLUTION LIMITED)
UNR51A6G0L
Panosonic
3293
3.5
Yingxinyuan INT'L (Group) Limited