Part Number | UNR521600L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS NPN 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SMini3-G1 |
Image |
UNR521600L
PANSONI
494
0.79
MY Group (Asia) Limited
UNR521600L
PANASO
4672
1.8025
Winsun Components Co., Ltd
UNR521600L
PANASONI
3210
2.815
HK HEQING ELECTRONICS LIMITED
UNR521600L
PANASON
5936
3.8275
CIS Ltd (CHECK IC SOLUTION LIMITED)
UNR521600L
Panosonic
7066
4.84
Yingxinyuan INT'L (Group) Limited