Part Number | UNR52A4G0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS NPN 150MW SMINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image |
UNR52A4G0L
PANSONI
8000
1.38
MY Group (Asia) Limited
UNR52A4G0L
PANASO
3000
2.2125
KDH SEMICONDUCTOR CO., LIMITED
UNR52A4G0L
PANASONI
3000
3.045
HK HEQING ELECTRONICS LIMITED
UNR52A4G0L
PANASON
4000
3.8775
CIS Ltd (CHECK IC SOLUTION LIMITED)
UNR52A4G0L
Panosonic
9000
4.71
Yingxinyuan INT'L (Group) Limited