Part Number | UNR52AFG0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS NPN 150MW SMINI3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image |
UNR52AFG0L
PANSONI
1173
0.32
Yingxinyuan INT'L (Group) Limited
UNR52AFG0L
PANASO
2480
1.2025
MY Group (Asia) Limited
UNR52AFG0L
PANASONI
349
2.085
KDH SEMICONDUCTOR CO., LIMITED
UNR52AFG0L
PANASON
3226
2.9675
CIS Ltd (CHECK IC SOLUTION LIMITED)
UNR52AFG0L
Panosonic
9473
3.85
HK HEQING ELECTRONICS LIMITED