Part Number | DRA2114E0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 200MW MINI3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G3-B |
Image |
DRA2114E0L
PANSONI
2680
1.06
HK HEQING ELECTRONICS LIMITED
DRA2114E0L
PANASO
6622
2.125
Ysx Tech Co., Limited
DRA2114E0L
PANASONI
1537
3.19
Acon Electronics Limited
DRA2114E0L
PANASON
8325
4.255
Yingxinyuan INT'L (Group) Limited
DRA2114E0L
Panosonic
7790
5.32
Gallop Great Holdings (Hong Kong) Limited