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Part Number | DRA2114Y0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 200MW MINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G3-B |
Image | ![]() |
DRA2114Y0L
PANSONI
8000
1.42
MY Group (Asia) Limited
DRA2114Y0L
PANASO
4500
1.7275
FINECHIPS ELECTRONICS (HK) CO.,LIMITED
DRA2114Y0L
PANASONI
6000
2.035
Ysx Tech Co., Limited
DRA2114Y0L
PANASON
1825
2.3425
Pacific Corporation
DRA2114Y0L
Panosonic
24000
2.65
N&S Electronic Co., Limited