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Part Number | DRA5114E0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2-B |
Image | ![]() |
DRA5114E0L
PANSONI
8000
0.7
MY Group (Asia) Limited
DRA5114E0L
PANASO
15000
1.8975
HK HEQING ELECTRONICS LIMITED
DRA5114E0L
PANASONI
1324
3.095
Dan-Mar Components Inc.
DRA5114E0L
PANASON
24500
4.2925
Cicotex Electronics (HK) Limited
DRA5114E0L
Panosonic
7000
5.49
CIS Ltd (CHECK IC SOLUTION LIMITED)