Part Number | DRA5114T0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2-B |
Image |
DRA5114T0L
PANSONI
3383
1.08
MY Group (Asia) Limited
DRA5114T0L
PANASO
4666
1.6325
HK HEQING ELECTRONICS LIMITED
DRA5114T0L
PANASONI
6941
2.185
KDH SEMICONDUCTOR CO., LIMITED
DRA5114T0L
PANASON
3407
2.7375
CIS Ltd (CHECK IC SOLUTION LIMITED)
DRA5114T0L
Panosonic
8467
3.29
Yingxinyuan INT'L (Group) Limited