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Part Number | DRA5114Y0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2-B |
Image | ![]() |
DRA5114Y0L
PANSONI
3000
0.99
ZODA (HK) ELECTRONIC TECHNOLOGY CO., LIMITED
DRA5114Y0L
PANASO
18136
1.705
Bonase Electronics (HK) Co., Limited
DRA5114Y0L
PANASONI
8000
2.42
MY Group (Asia) Limited
DRA5114Y0L
PANASON
1900
3.135
Sentai Trading Limited
DRA5114Y0L
Panosonic
1
3.85
Dan-Mar Components Inc.