![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
Part Number | DRA5123E0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2-B |
Image | ![]() |
DRA5123E0L
PANSONI
8860
1.36
Cicotex Electronics (HK) Limited
DRA5123E0L
PANASO
7110
2.4325
Dan-Mar Components Inc.
DRA5123E0L
PANASONI
2393
3.505
MY Group (Asia) Limited
DRA5124E0L
PANASON
8696
4.5775
Hong Kong In Fortune Electronics Co., Limited
DRA5123Y0L
Panosonic
7760
5.65
Ande Electronics Co., Limited