Part Number | DRA5123J0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2-B |
Image |
DRA5123J0L
PANSONI
357
0.47
Bonase Electronics (HK) Co., Limited
DRA5123J0L
PANASO
5856
1.1675
Viassion Technology Co., Limited
DRA5123J0L
PANASONI
7237
1.865
F-power Electronics Co
DRA5123J0L
PANASON
818
2.5625
N&S Electronic Co., Limited
DRA5123J0L
Panosonic
1536
3.26
CIS Ltd (CHECK IC SOLUTION LIMITED)