Part Number | DRA2114Y0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 200MW MINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | Mini3-G3-B |
Image |
DRA2114Y0L
PANSONI
9839
0.08
MY Group (Asia) Limited
DRA2114Y0L
PANASO
2006
1.3
FINECHIPS ELECTRONICS (HK) CO.,LIMITED
DRA2114Y0L
PANASONI
4400
2.52
Ysx Tech Co., Limited
DRA2114Y0L
PANASON
2985
3.74
Pacific Corporation
DRA2114Y0L
Panosonic
4161
4.96
N&S Electronic Co., Limited