Part Number | DRA5114Y0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2-B |
Image |
DRA5114Y0L
PANSONI
8051
0.96
ZODA (HK) ELECTRONIC TECHNOLOGY CO., LIMITED
DRA5114Y0L
PANASO
7989
1.805
Bonase Electronics (HK) Co., Limited
DRA5114Y0L
PANASONI
4396
2.65
MY Group (Asia) Limited
DRA5114Y0L
PANASON
8567
3.495
Sentai Trading Limited
DRA5114Y0L
Panosonic
410
4.34
Dan-Mar Components Inc.