Part Number | UNR52A2G0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS NPN 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2 |
Image |
UNR52A2G0L
PANSONI
429
1.82
MY Group (Asia) Limited
UNR52A0G
PANASO
2701
2.6725
Yingxinyuan INT'L (Group) Limited
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PANASONI
5720
3.525
Hengguang (HK) Electronics Trading Limited
UNR52A3G0LS0
PANASON
8619
4.3775
HK TWO L ELECTRONIC LIMITED
UNR52A0G0L
Panosonic
7992
5.23
MY Group (Asia) Limited