Part Number | DRA5113Z0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 1k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2-B |
Image |
DRA5113Z0L
PANSONI
5519
0.78
MY Group (Asia) Limited
DRA5113Z0L
PANASO
6305
1.8125
Shenzhen Shangdexincheng Electronics Co.,Ltd
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PANASONI
7592
2.845
HK HEQING ELECTRONICS LIMITED
DRA5113Z0L
PANASON
4548
3.8775
Yingxinyuan INT'L (Group) Limited
DRA5113Z0L
Panosonic
5661
4.91
Dan-Mar Components Inc.