Part Number | DRA5114T0L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Panasonic |
Description | TRANS PREBIAS PNP 150MW SMINI3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-85 |
Supplier Device Package | SMini3-F2-B |
Image |
DRA5114T0L
PANSONI
6061
0.85
MY Group (Asia) Limited
DRA5114T0L
PANASO
7927
1.875
HK HEQING ELECTRONICS LIMITED
DRA5114T0L
PANASONI
2880
2.9
KDH SEMICONDUCTOR CO., LIMITED
DRA5114T0L
PANASON
8318
3.925
CIS Ltd (CHECK IC SOLUTION LIMITED)
DRA5114T0L
Panosonic
5645
4.95
Yingxinyuan INT'L (Group) Limited